Patent Number: 6,512,259

Title: Capacitor with high-.epsilon. dielectric or ferroelectric material based on the fin stack principle

Abstract: A capacitor in a semiconductor configuration on a substrate includes a noble-metal-containing first capacitor electrode which is formed with a plurality of mutually spaced-apart lamellae. The lamellae are oriented substantially parallel to a surface of the substrate and are mechanically and electrically connected to one another on a flank by a support structure. The capacitor furthermore has a capacitor dielectric formed of high-.di-elect cons. dielectric or ferroelectric material disposed on the first capacitor electrode. The capacitor also has a second capacitor electrode on the capacitor dielectric.

Inventors: Lange; Gerrit (Munchen, DE), Schlosser; Till (Munchen, DE)

Assignee: Infineon Technologies AG

International Classification: H01L 21/70 (20060101); H01L 27/108 (20060101); H01L 21/8242 (20060101); H01L 027/108 ()

Expiration Date: 01/28/2020