Patent Number: 6,512,268

Title: Super-junction semiconductor device

Abstract: The super-junction semiconductor device includes an alternating conductivity type layer including n-type drift regions and p-type partition regions laminated alternately with each other outside the active region of the device. A first FP electrode is formed above n-type drift region with an insulation film interposed therebetween. The first FP electrode is made contact with the surface of p-type partition region or floated from p-type partition region. The FP electrode may be extended over a plurality of n-type drift regions. Resistance is arranged between the adjacent FP electrodes. An n-type stopper region is formed vertically through the second alternating conductivity type layer outside the active region and deeply enough to reach the layer with low electrical resistance.

Inventors: Ueno; Katsunori (Nagano, JP)

Assignee: Fuji Electric Co., Ltd.

International Classification: H01L 29/02 (20060101); H01L 29/739 (20060101); H01L 29/73 (20060101); H01L 29/06 (20060101); H01L 29/78 (20060101); H01L 29/66 (20060101); H01L 29/861 (20060101); H01L 29/872 (20060101); H01L 029/76 (); H01L 029/94 (); H01L 031/062 (); H01L 031/113 (); H01L 031/119 ()

Expiration Date: 01/28/2020