Patent Number: 6,512,283

Title: Monolithic low dielectric constant platform for passive components andmethod

Abstract: A method for forming a low dielectric constant insulator in a monolithicsubstrate and the dielectric formed by the method. The method includesformation and patterning of a mask on a silicon substrate followed byanisotropic etching of the silicon to provide a dense array of deep holes.Isotropic etching may be used to form a cavity beneath the dense array ofholes and coupling to bottoms of the holes. Sides of the holes are thenthermally oxidized. A conventional dielectric is then formed, sealing topsof the holes. The conventional dielectric is optionally densified.Conventional chemical-mechanical polishing then planarizes the dielectricand further conventional processing may be carried out on the wafer toform active circuitry together with passive components such as high Qinductors.

Inventors: Davies; Robert Bruce (Tempe, AZ)


International Classification: H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 23/522 (20060101); H01L 23/52 (20060101); H01L 029/00 ()

Expiration Date: 01/22015