Patent Number: 6,512,298

Title: Semiconductor device and method for producing the same

Abstract: A first element electrode and a second element electrode connected electrically to a semiconductor element on a substrate are formed, and then an insulating film is formed on the substrate including the element electrodes. Thereafter, a first opening for exposing the first element electrode and a second opening for exposing the second element electrode are formed on the insulating film. Then, a first external electrode connected to the first element electrode via the first opening is formed immediately above the first element electrode. Furthermore, a second external electrode and a connecting wire having one end connected to the second element electrode via the second opening and the other end connected to the second external electrode are formed on the insulating film.

Inventors: Sahara; Ryuichi (Osaka, JP), Watase; Kazumi (Kyoto, JP), Kumakawa; Takahiro (Osaka, JP), Kainoh; Kazuyuki (Osaka, JP), Shimoishizaka; Nozomi (Kyoto, JP)

Assignee: Matsushita Electric Industrial Co., Ltd.

International Classification: H01L 23/485 (20060101); H01L 23/28 (20060101); H01L 23/31 (20060101); H01L 23/522 (20060101); H01L 23/52 (20060101); H01L 23/48 (20060101); H01L 029/40 ()

Expiration Date: 01/28/2020