Patent Number: 6,515,293

Title: Method and apparatus for detecting thickness of thin layer formed on a wafer

Abstract: A method of measuring the thickness of a thin layer, by which the thickness of a top layer formed on the surface of a wafer can be detected in real time, and an apparatus therefor. This method includes irradiating light onto a cell and obtaining luminance from reflected light, detecting the thickness of a thin layer in an oxide site which is adjacent to the cell, repeating the irradiating and detecting steps to obtain a plurality of luminance values from cells formed on the wafer and a plurality of thickness values of thin layers in oxide sites that are adjacent to the cells, and employing a thickness calculation formula for calculating the thickness of a top layer using the plurality of luminance values and plurality of thickness values obtained in the prior steps. The thickness of a thin layer is directly detected from the luminance of light reflected by the cell, so that it can be precisely detected in a non-destructive manner, thus making it possible to detect the thickness of a thin layer in real time during the manufacture of a semiconductor device.

Inventors: Jun; Chung-sam (Hwasung-gun, KR), Chon; Sang-mun (Seongnam, KR), Choi; Sang-bong (Suwon, KR), Cho; Hyun-suk (Suwon, KR), Hyun; Pil-sik (Yongin, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: G01B 11/06 (20060101); H01L 21/66 (20060101); G01N 021/86 (); G01V 008/00 ()

Expiration Date: 02/04/2020