Patent Number: 6,515,368

Title: Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copper

Abstract: A method of reducing electromigration in copper interconnect lines by restricting Cu-diffusion pathways along a Cu surface via doping the Cu surface with Zn from an interim copper-zinc alloy (Cu--Zn) thin film electroplated on the copper (Cu) surface from a stable chemical solution, and controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using interim reduced-oxygen Cu--Zn alloy thin films for forming an encapsulated dual-inlaid interconnect structure. The films are formed by electroplating a Cu surface via by electroplating, the Cu surface in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu--Zn alloy thin films and a Cu-fill; and planarizing the interconnect structure.

Inventors: Lopatin; Sergey (Santa Clara, CA), Nickel; Alexander H. (Mountain View, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/70 (20060101); H01L 21/288 (20060101); H01L 23/532 (20060101); H01L 21/768 (20060101); H01L 21/02 (20060101); H01L 23/522 (20060101); H01L 23/52 (20060101); H01L 023/532 ()

Expiration Date: 02/04/2020