Patent Number: 6,528,820

Title: Semiconductor device and method of fabricating same

Abstract: There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.

Inventors: Yamazaki; Shunpei (Tokyo, JP), Teramoto; Satoshi (Kanagawa, JP), Koyama; Jun (Kanagawa, JP), Ogata; Yasushi (Kanagawa, JP), Hayakawa; Masahiko (Kanagawa, JP), Osame; Mitsuaki (Kanagawa, JP), Ohtani; Hisashi (Kanagawa, JP), Hamatani; Toshiji (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/20 (20060101); H01L 21/322 (20060101); H01L 29/00 (20060101); H01L 29/02 (20060101); H01L 21/02 (20060101); H01L 27/12 (20060101); H01L 21/324 (20060101); H01L 29/66 (20060101); H01L 21/336 (20060101); H01L 29/786 (20060101); H01L 21/00 (20060101); H01L 029/00 ()

Expiration Date: 03/04/2020