Patent Number: 6,528,827

Title: MSM device and method of manufacturing same

Abstract: An MSM semiconductor circuit formed on a semi-insulating substrate that includes a set of contacts, first and second absorption layers, and a wide band gap buffer layer. The first absorption layer is formed on the semi-insulating substrate. The second absorption layer operably coupled to the set of contacts. The wide band gap buffer layer disposed between the first absorption layer and the second absorption layer.

Inventors: Henning; Jason P. (West Lafayette, IN)

Assignee: OptoLynx, Inc.

International Classification: H01L 31/102 (20060101); H01L 31/0328 (20060101); H01L 31/06 (20060101); H01L 31/0264 (20060101); H01L 31/072 (20060101); H01L 31/109 (20060101); H01L 003/072 ()

Expiration Date: 03/04/2020