Patent Number: 6,528,828

Title: Differential negative resistance HBT and process for fabricating the same

Abstract: A differential negative resistance element includes a heavily doped GaAslayer interposed between a collector layer of lightly doped GaAs and anemitter layer of heavily doped AlGaAs, is shared between a base regionbetween the collector layer and the emitter layer, a base contact regionand a channel region between the base region and the base contact region,and a depletion layer is developed into the channel region together withthe collector voltage so as to exhibit a differential negative resistancecharacteristics, wherein the channel region is formed through an epitaxialgrowth and etching so that the manufacturer easily imparts targetdifferential negative resistance characteristics to the channel region.

Inventors: Uemura; Tetsuya (Tokyo, JP)

Assignee:

International Classification: H01L 21/02 (20060101); H01L 29/66 (20060101); H01L 29/732 (20060101); H01L 29/02 (20060101); H01L 29/205 (20060101); H01L 21/331 (20060101); H01L 31/0328 (20060101); H01L 29/73 (20060101); H01L 29/737 (20060101); H01L 31/0264 (20060101); H01L 029/737 ()

Expiration Date: 03/02015