Patent Number: 6,528,835

Title: Titanium nitride metal interconnection system and method of forming the same

Abstract: A method of fabricating a DRAM integrated circuit structure (30) and the structure so formed, in which a common interconnect material (42, 48) is used as a first level interconnection layer in both an array portion (30a) and periphery portion (30p) is disclosed. The interconnect material (42, 48) consists essentially of titanium nitride, and is formed by direct reaction of titanium metal (40) in a nitrogen ambient. Titanium silicide (44) is formed at each contact location (CT, BLC) as a result of the direct react process. Storage capacitor plates (16, 18) and the capacitor dielectric (17) are formed over the interconnect material (42, 48), due to the thermal stability of the material. Alternative processes of forming the interconnect material (42, 48) are disclosed, to improve step coverage.

Inventors: Kaeriyama; Toshiyuki (Ibaraki-Ken, JP)

Assignee: Texas Instruments Incorporated

International Classification: H01L 21/02 (20060101); H01L 21/768 (20060101); H01L 21/70 (20060101); H01L 21/285 (20060101); H01L 21/8242 (20060101); H01L 27/108 (20060101); H01L 027/108 (); H01L 029/76 (); H01L 029/94 (); H01L 031/119 ()

Expiration Date: 03/04/2020