Patent Number: 6,528,841

Title: NAND type flash memory device having dummy region

Abstract: A NAND type flash memory device has a dummy region forming a dummy pattern. In the flash memory device, a common source line is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells.

Inventors: Choi; Eun-Young (Kyunggi-do, KR), Choi; Jung-Dal (Kyunggi-do, KR), Lee; Jae-Duk (Kyunggi-do, KR), Kim; Hong-Soo (Seoul, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 27/115 (20060101); H01L 029/788 ()

Expiration Date: 03/04/2020