Patent Number: 6,528,851

Title: Post-silicidation implant for introducing recombination center in body of SOI MOSFET

Abstract: A semiconductor-on-insulator (SOI) transistor is disclosed. The SOI transistor includes a source region, a drain region and a body region disposed therebetween, the body region including a gate disposed thereon, the source and drain regions including respective silicide regions. The body region includes a region of recombination centers formed by atom implantation, wherein atoms forming the region of recombination centers are implanted at an angle from opposite sides of the gate in a direction towards the body region, with the gate and source and drain silicide regions acting as an implant blocking mask, such that the region of recombination centers is disposed between a source/body junction and a drain/body junction. Also disclosed is a method of fabricating the SOI transistor.

Inventors: Yu; Bin (Cupertino, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/02 (20060101); H01L 29/66 (20060101); H01L 21/336 (20060101); H01L 29/786 (20060101); H01L 29/45 (20060101); H01L 29/40 (20060101); H01L 027/01 ()

Expiration Date: 03/04/2020