Patent Number: 6,528,853

Title: Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors

Abstract: A method and semiconductor structure are provided for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors. A bulk silicon substrate is provided. A deep ion implant layer is implanted to reside below an oxide insulator. An oxygen implant layer is implanted while applying a mask to block the oxygen implant layer in selected regions. The selected regions provide for body contact for the SOI transistors. Holes are formed extending into the deep ion implant layer and the bulk silicon substrate. The holes are filled with an electrically conductive material to create stud contacts to the deep ion implant layer and the bulk silicon substrate.

Inventors: Christensen; Todd Alan (Rochester, MN), Sheets, II; John Edward (Zumbrota, MN)

Assignee: International Business Machines Corporation

International Classification: H01L 21/70 (20060101); H01L 29/66 (20060101); H01L 29/786 (20060101); H01L 21/762 (20060101); H01L 29/02 (20060101); H01L 29/06 (20060101); H01L 027/01 ()

Expiration Date: 03/04/2011