Patent Number: 6,528,862

Title: Bipolar transistor with a box-type germanium profile that lies outside of the emitter-base depletion region

Abstract: The upper epitaxial layer of a bipolar transistor has a silicon germanium layer and an overlying cap layer. The upper epitaxial layer includes an intrinsic emitter region and a base region. The silicon germanium layer is spaced apart from the intrinsic emitter region, and lies outside of the depletion region associated with the junction between the intrinsic emitter region and the base region.

Inventors: Sadovnikov; Alexei (Sunnyvale, CA)

Assignee: National Semiconductor Corporation

International Classification: H01L 21/02 (20060101); H01L 29/66 (20060101); H01L 21/331 (20060101); H01L 29/737 (20060101); H01L 027/082 ()

Expiration Date: 03/04/2020