Patent Number: 6,528,865

Title: Thin amorphous fluorocarbon films

Abstract: An amorphous fluorocarbon material useful as a thin film low-k dielectriclayer is disclosed. This film is deposited in a high density plasmareactor, preferably an electron cyclotron resonance reactor, using heliumas the plasma gas. Substituting helium for argon as the plasma gas resultsin the thin film layer having a number of desirable qualities, including ahigh hardness, a high modulus, and high thermal stability. These qualitiesmake the film especially useful as an interlayer dielectric material inintegrated circuit manufacturing.

Inventors: Banerjee; Indrajit (San Jose, CA)


International Classification: C23C 16/30 (20060101); H01L 21/02 (20060101); H01L 21/768 (20060101); H01L 21/70 (20060101); H01L 23/532 (20060101); H01L 21/312 (20060101); H01L 23/52 (20060101); B05D 5/08 (20060101); B05D 7/24 (20060101); H01L 023/58 (); H01L 023/48 ()

Expiration Date: 03/02015