Patent Number: 6,528,894

Title: Use of nitrides for flip-chip encapsulation

Abstract: A hermetically sealed semiconductor flip chip and its method of manufacture is disclosed. The semiconductor flip chip of the present invention is sealed with a silicon nitride layer on an active surface of the flip chip. The silicon nitride layer covers the chip active surface, including bond pads and conductive connectors such as solder balls formed over the bond pads to effect electrical and mechanical connection to terminal pads of a carrier substrate. A portion of the silicon nitride layer is penetrated or removed to expose a portion of each conductive connector. The flip chip is then attached to a substrate by contact of the exposed portions of the conductive connectors with the terminal pads of the substrate. Also included in the invention is the alternative of sealing the flip chip, substrate and intervening connectors with a silicon nitride layer after the attachment of the flip chip to the substrate.

Inventors: Akram; Salman (Boise, ID), Farnworth; Warren M. (Nampa, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/02 (20060101); H01L 21/60 (20060101); H01L 23/28 (20060101); H01L 23/31 (20060101); H05K 3/28 (20060101); H05K 3/34 (20060101); H01L 023/29 (); H01L 023/48 (); H01L 023/52 (); H01L 029/40 ()

Expiration Date: 03/04/2020