Patent Number: 6,528,983

Title: Power sensor for RF power amplifier

Abstract: A system for sensing RF amplifier output power includes an amplifier transistor and a sampling transistor that is physically smaller than the amplifier transistor. The sampling transistor is configured to sample the same RF input signal that is amplified by the amplifier transistor. A bias circuit associated with the transistors includes a selection of components based upon operating parameters as well as actual physical sizes of the transistors. The selection of component values in association with transistor sizes is used to enable generation of a current sensing signal that is proportional to the power level of the RF output signal generated by the amplifier transistor.

Inventors: Augustine; Paul J. (Kernersville, NC)

Assignee: RF Micro Devices, Inc.

International Classification: G01R 21/00 (20060101); G01R 015/10 ()

Expiration Date: 03/04/2020