Patent Number: 6,529,042

Title: Semiconductor integrated circuit

Abstract: A semiconductor integrated circuit of the present invention has a CMOS circuit 1 composed of a first MOSFET and a switch 2 composed of a second MOSFET which are connected in series. Then, a circuit-driving voltage and a switch-driving voltage are applied independently to the CMOS circuit 1 and the switch 2. The switch-driving voltage is larger than the circuit-driving voltage.

Inventors: Hiramoto; Toshiro (Yokohama, JP), Sakurai; Takayasu (Tokyo, JP), Inukai; Takashi (Tokyo, JP)

Assignee: University of Tokyo

International Classification: H03K 19/00 (20060101); H03K 019/094 ()

Expiration Date: 03/04/2011