Patent Number: 6,617,187

Title: Method for fabricating an electrically addressable silicon-on-sapphire light valve

Abstract: A method for fabricating a monolithically integrated liquid crystal array display and control circuitry on a silicon-on-sapphire structure comprises the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphire structure; b) ion implanting the epitaxial silicon layer; c) annealing the silicon-on sapphire structure; d) oxidizing the epitaxial silicon layer to form a silicon dioxide layer from portion of the epitaxial silicon layer so that a thinned epitaxial silicon layer remains; e) removing the silicon dioxide layer to expose the thinned epitaxial silicon layer; f) fabricating an array of pixels from the thinned epitaxial silicon layer; and g) fabricating integrated circuitry from the thinned epitaxial silicon layer which is operably coupled to modulate the pixels. The thinned epitaxial silicon supports the fabrication of device quality circuitry which is used to control the operation of the pixels.

Inventors: Shimabukuro; Randy L. (San Diego, CA), Russell; Stephen D. (San Diego, CA), Offord; Bruce W. (San Diego, CA)

Assignee: The United States of America as represented by the Secretary of the Navy

International Classification: G02F 1/13 (20060101); G02F 1/1362 (20060101); H01L 21/8238 (20060101); H01L 21/84 (20060101); H01L 21/70 (20060101); H01L 21/86 (20060101); H01L 21/20 (20060101); H01L 21/02 (20060101); H01L 021/00 ()

Expiration Date: 09/09/2020