Patent Number: 6,617,206

Title: Method of forming a capacitor structure

Abstract: A capacitor structure and method of forming it are described. In particular, a high-K dielectric oxide is provided as the capacitor dielectric. The high-K dielectric is deposited in a series of thin layers and oxidized in a series of oxidation steps, as opposed to a depositing a single thick layer. Further, at least one of the oxidation steps is less aggressive than the oxidation environment or environments that would be used to deposit the single thick layer. This allows greater control over oxidizing the dielectric and other components beyond the dielectric.

Inventors: Sandhu; Gurtej S. (Boise, ID), Blalock; Guy T. (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/8242 (20060101); H01L 29/76 (20060101); H01L 29/66 (20060101); H01L 21/70 (20060101); H01L 021/824 ()

Expiration Date: 09/09/2020