Patent Number: 6,617,239

Title: Subtractive metallization structure and method of making

Abstract: A subtractive metallization structure with a plurality of low dielectric constant insulating layers acting as etch stops is disclosed. The selected low dielectric constant materials have similar methods of formation and similar capacities to withstand physical and thermal stress. In addition, the etchant used for each low dielectric constant insulating layer has a very small etching rate relative to the other low dielectric constant insulating layers.

Inventors: Farrar; Paul A. (South Burlington, VT)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/768 (20060101); H01L 21/70 (20060101); H01L 021/476 ()

Expiration Date: 09/09/2020