Patent Number: 6,617,242

Title: Method for fabricating interlevel contacts of aluminum/refractory metal alloys

Abstract: A method for fabricating interlevel contacts in semiconductor integrated circuits provides for formation of a contact opening through an insulating layer. A layer of refractory metal, or refractory metal alloy, is deposited over the surface of the integrated circuit chip. An aluminum layer is then deposited at a significantly elevated temperature, so that an aluminum/refractory metal alloy is formed at the interface between the aluminum layer and the refractory metal layer. Formation of such an alloy causes an expansion of the metal within the contact opening, thereby filling the contact opening and providing a smooth upper contour to the deposited aluminum layer.

Inventors: Chen; Fusen E. (Dallas, TX), Liou; Fu-Tai (Carrollton, TX), Turner; Timothy E. (Roanoke, TX), Wei; Che-Chia (Plano, TX), Lin; Yih-Shung (Carrollton, TX), Dixit; Girish Anant (Dallas, TX)

Assignee: STMicroelectronics, Inc.

International Classification: H01L 21/285 (20060101); H01L 21/768 (20060101); H01L 23/52 (20060101); H01L 21/70 (20060101); H01L 23/48 (20060101); H01L 23/485 (20060101); H01L 23/532 (20060101); H01L 21/02 (20060101); H01L 021/44 ()

Expiration Date: 09/09/2020