Patent Number: 6,617,246

Title: Semiconductor processing methods and integrated circuitry

Abstract: In aspect, the invention includes a semiconductor processing method including: a) forming an electrically insulative layer over a substrate; b) forming an opening within the electrically insulative layer, the opening having a periphery defined at least in part by a bottom surface and a sidewall surface; c) forming a first layer including TiN within the opening, the first layer being over the bottom surface and along the sidewall surface; d) forming a second layer including elemental Ti over the electrically insulative layer but substantially not within the opening, the second layer having a thickness of less than 50 .ANG. along the sidewall surface and over the bottom surface; and e) forming a layer which includes aluminum within the opening and over the second layer. In another aspect, the invention includes a semiconductor processing method including: a) forming a first layer which includes aluminum over an electrically insulative layer; b) forming a first layer which includes titanium over the first layer which includes aluminum; c) forming a second layer which includes titanium over the first layer which includes titanium, one of the first and second layers which include titanium including elemental Ti and the other of the first and second layers which include titanium including TiN; and d) forming a second layer which includes aluminum over the second layer which includes titanium.

Inventors: Sandhu; Gurtej S. (Boise, ID), Iyer; Ravi (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/02 (20060101); H01L 21/768 (20060101); H01L 21/70 (20060101); H01L 21/3205 (20060101); H01L 021/44 ()

Expiration Date: 09/09/2020