Patent Number: 6,617,259

Title: Method for fabricating semiconductor device and forming interlayerdielectric film using high-density plasma

Abstract: A method for fabricating a semiconductor device and forming an insulatingfilm used therein, includes forming an isolation insulating film on asemiconductor wafer and forming gates, separated by gaps having apredetermined distance, on an active region. Next, a first interlayerdielectric film is deposited to a predetermined thickness on thesemiconductor wafer having the gates, so that the gaps between the gatesare not completely filled. Then, a sputtering etch is performed entirelyon a surface of the first interlayer dielectric film. Thereafter, thefirst interlayer dielectric film is partially removed through isotropicetching. Next, a second interlayer dielectric film is deposited on thefirst interlayer dielectric film so that the gaps between the gates arecompletely filled. According to the above method, a gap between gatepatterns can be completely filled without a void by performing sputteringetch on interlayer dielectric films formed on gate patterns, therebyenhancing the reliability of a semiconductor device.

Inventors: Jung; Woo Chan (Seoul, KR), Lee; Jong Koo (Kyungki-do, KR)

Assignee:

International Classification: H01L 21/02 (20060101); H01L 21/768 (20060101); H01L 21/70 (20060101); H01L 21/3105 (20060101); H01L 21/316 (20060101); H01L 21/8234 (20060101); H01L 021/31 ()

Expiration Date: 09/02015