Patent Number: 6,670,640

Title: Method for producing semiconductor device

Abstract: In a producing a thin film transistor, a solution containing a metalelement for promoting crystallization of silicon is added in contact withan amorphous silicon film, and then a silicide layer is formed by heatingprocess. Further, after a region as crystal growth nucleus is formed bypatterning the silicide layer, laser light is irradiated while heatingprocess. As a result, crystal-growth is performed from the region ascrystal growth nucleus in the amorphous silicon film, thereby to formmonodomain regions corresponding to a single crystal. Also, before thesolution is added, the amorphous silicon film may be subjected to plasmatreatment 30.

Inventors: Yamazaki; Shunpei (Tokyo, JP), Kusumoto; Naoto (Kanagawa, JP), Teramoto; Satoshi (Kanagawa, JP)

Assignee:

International Classification: C30B 1/02 (20060101); C30B 1/00 (20060101); H01L 21/02 (20060101); H01L 21/20 (20060101); H01L 21/70 (20060101); H01L 21/322 (20060101); H01L 21/336 (20060101); H01L 21/84 (20060101); G02F 1/1362 (20060101); G02F 1/13 (20060101); H01L 029/786 ()

Expiration Date: 12/32016