Patent Number:
6,670,644
Title:
Laser-induced bandgap shifting for photonic device integration
Abstract:
To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.
Inventors:
Dubowski; Jan J. (Ottawa, CA)
Assignee:
National Research Council of Canada
International Classification:
H01S 5/026 (20060101); H01S 5/00 (20060101); H01S 5/34 (20060101); H01S 5/20 (20060101); H01L 033/00 ()
Expiration Date:
12/30/2020