Patent Number: 6,670,644

Title: Laser-induced bandgap shifting for photonic device integration

Abstract: To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.

Inventors: Dubowski; Jan J. (Ottawa, CA)

Assignee: National Research Council of Canada

International Classification: H01S 5/026 (20060101); H01S 5/00 (20060101); H01S 5/34 (20060101); H01S 5/20 (20060101); H01L 033/00 ()

Expiration Date: 12/30/2020