Patent Number: 6,670,670

Title: Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same

Abstract: A single electron memory device including quantum dots between a gate electrode and a single electron storage element and a method for manufacturing the same, wherein the single electron memory device includes a substrate on which a nano-scale channel region is formed between a source and a drain, and a gate lamination pattern including quantum dots on the channel region. The gate lamination pattern includes a lower layer formed on the channel region, a single electron storage medium storing a single electron tunneling through the lower layer formed on the lower layer, an upper layer including quantum dots formed on the single electron storage medium, and a gate electrode formed on the upper layer to be in contact with the quantum dots.

Inventors: Chae; Soo-doo (Seoul, KR), Kim; Byong-man (Gunpo, KR), Kim; Moon-kyung (Yongin, KR), Chae; Hee-soon (Yongin, KR), Ryu; Won-il (Seoul, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 29/66 (20060101); H01L 21/28 (20060101); H01L 21/02 (20060101); H01L 29/788 (20060101); H01L 029/788 ()

Expiration Date: 12/30/2020