Patent Number: 6,670,679

Title: Semiconductor device having an ESD protective circuit

Abstract: A protective circuit includes a floating gate MOSFET having a source-drain path connected between an I/O line and a source line or a ground line, a control gate connected to the I/O line and a floating gate connected to the source line or the ground line.

Inventors: Hirata; Morihisa (Tokyo, JP)

Assignee: NEC Electronics Corporation

International Classification: H01L 29/66 (20060101); H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 23/58 (20060101); H01L 29/78 (20060101); H01L 23/62 (20060101); H01L 23/60 (20060101); H01L 21/8247 (20060101); H01L 21/822 (20060101); H01L 21/336 (20060101); H01L 27/115 (20060101); H01L 21/8238 (20060101); H01L 27/088 (20060101); H01L 27/092 (20060101); H01L 27/04 (20060101); H01L 27/085 (20060101); H02H 7/20 (20060101); H01L 29/792 (20060101); H01L 27/06 (20060101); H01L 27/02 (20060101); H02H 3/20 (20060101); H02H 3/22 (20060101); H01L 29/788 (20060101); H03K 17/08 (20060101); H03K 19/003 (20060101); H01L 023/62 ()

Expiration Date: 12/30/2020