Patent Number: 6,670,680

Title: Semiconductor device comprising a dual gate CMOS

Abstract: A dual gate type CMOS device according to the present invention includes a silicon substrate having a trench in the main surface and a gate electrode including a polysilicon film and a tungsten silicide film formed above the main surface via a gate insulating film. The polysilicon film has a first part into which p type impurities are doped, a second part into which n type impurities are doped and a connection part which connects the first part and the second part within the trench, and part of the tungsten silicide film located above the connection part is removed.

Inventors: Nohsoh; Hiroyasu (Hyogo, JP), Soeda; Shinya (Hyogo, JP)

Assignee: Renesas Technology Corp.

International Classification: H01L 21/70 (20060101); H01L 21/8238 (20060101); H01L 029/76 ()

Expiration Date: 12/30/2020