Patent Number: 6,670,683

Title: Composite transistor having a slew-rate control

Abstract: A metal oxide semiconductor transistor having a slew-rate control isdisclosed. The transistor having a slew-rate control includes an elongateddiffusion area and an elongated gate overlying the diffusion area. Theelongated diffusion area has at least two diffusion regions, each having athreshold voltage that is different from each other. The elongated gatehas a gate contact at only one side of the elongated diffusion area.

Inventors: Bernstein; Kerry (Underhill, VT), Correale, Jr.; Anthony (Raleigh, NC), Hook; Terence Blackwell (Jericho, VT), Stout; Douglas Willard (Milton, VT)

Assignee:

International Classification: H01L 29/10 (20060101); H01L 29/02 (20060101); H01L 029/76 (); H01L 027/01 (); H01L 029/94 (); H01L 031/062 (); H01L 031/113 ()

Expiration Date: 12/32016