Patent Number: 6,670,694

Title: Semiconductor device

Abstract: A surface orientation other than a (100) surface orientation is exposed tothe surface portion of a silicon substrate having the (100) surfaceorientation, for example. A silicon epitaxial growth layer is formed onlyon a region containing a channel forming region on the (100) surfaceorientation.

Inventors: Momose; Hisayo (Yokohama, JP)

Assignee:

International Classification: H01L 29/66 (20060101); H01L 21/02 (20060101); H01L 21/20 (20060101); H01L 29/04 (20060101); H01L 21/70 (20060101); H01L 29/78 (20060101); H01L 21/336 (20060101); H01L 21/8238 (20060101); H01L 27/092 (20060101); H01L 27/085 (20060101); H01L 29/02 (20060101); H01L 029/04 (); H01L 031/036 (); H01L 029/76 (); H01L 029/94 (); H01L 031/062 (); H01L 031/113 (); H01L 031/119 (); H01L 023/58 ()

Expiration Date: 12/32016