Patent Number: 6,670,695

Title: Method of manufacturing anti-reflection layer

Abstract: An anti-reflection layer and method of manufacture. A silicon substrate has a conductive layer formed thereon. Plasma-enhanced chemical vapor deposition is performed to form a graded silicon oxynitride layer over the conductive layer. During silicon oxynitride deposition, concentration of one of the reactive gases nitrous oxide is gradually reduced so that the graded silicon oxynitride layer is oxygen-rich near bottom but nitrogen-rich near the top.

Inventors: Gau; Jing-Horng (Hsinchu Hsien, TW), Chen; Shuenn-Jeng (Tainan Hsien, TW)

Assignee: United Microelectronics Corp.

International Classification: H01L 21/02 (20060101); H01L 21/314 (20060101); H01L 21/027 (20060101); H01L 023/58 (); H01L 021/469 ()

Expiration Date: 12/30/2020