Patent Number: 6,670,710

Title: Semiconductor device having multi-layered wiring

Abstract: A semiconductor device is provided with a first insulating film, a first wiring layer formed in the first insulating film, a second insulating film formed above the first wiring layer and the first insulating film, the second insulating film including a low dielectric constant film, a second wiring layer formed in the second insulating film and coupled to the first wiring layer through a first connection section, and a third insulating film formed above the second wiring layer and the second insulating film and serving as one of an interlayer insulating film and a passivation film, and at least one of the first and third insulating films being one of a film formed mainly of SiON, a film formed mainly of SiN, and a laminated film being the films formed mainly of SiON or SiN respectively.

Inventors: Matsunaga; Noriaki (Chigasaki, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 21/70 (20060101); H01L 23/52 (20060101); H01L 21/768 (20060101); H01L 23/532 (20060101); H01L 23/31 (20060101); H01L 23/28 (20060101); H01L 023/48 ()

Expiration Date: 12/30/2020