Patent Number: 6,670,845

Title: High D.C. voltage to low D.C. voltage circuit converter

Abstract: A high DC voltage to low DC voltage circuit has a first NMOS transistor with the first terminal connected to the source of the high DC voltage and the second terminal connected to supply the low DC voltage. The gate is connected to a middle node of a resistor divider circuit having one end connected to the source of the high DC voltage and the other end to a common node. A plurality of serially connected NMOS transistors has a first end connected to the common node and a second end connected to ground. Each of the NMOS transistors in the plurality of serially connected NMOS transistors has its gate connected to its first terminal and to the second terminal of the immediate adjacent NMOS transistor.

Inventors: Fong; David (Cupertino, CA)

Assignee: Silicon Storage Technology, Inc.

International Classification: G05F 1/46 (20060101); G05F 1/10 (20060101); G05F 003/24 ()

Expiration Date: 12/30/2020