Patent Number: 6,674,305

Title: Method of forming a semiconductor device and structure therefor

Abstract: A method of forming an output transistor (11) protects the output transistor (11) from overvoltage conditions on an output (13). The body of the output transistor (11) is coupled to the gate of the transistor (11) prior to the high voltage being applied to the output (13).

Inventors: Sheng; Senpeng (Chandler, AZ), Dover; Frank (Mesa, AZ), Heim; Barry (Mesa, AZ)

Assignee: Semiconductor Components Industries LLC

International Classification: H03K 19/003 (20060101); H03K 019/017 ()

Expiration Date: 01/06/2021