Patent Number: 6,674,470

Title: MOS-type solid state imaging device with high sensitivity

Abstract: A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

Inventors: Tanaka; Nagataka (Yokohama, JP), Oba; Eiji (Kawasaki, JP), Mabuchi; Keiji (Kitakami, JP), Sasaki; Michio (Kamakura, JP), Miyagawa; Ryohei (Sagamihara, JP), Yamashita; Hirofumi (Tokyo, JP), Iida; Yoshinori (Tokyo, JP), Ihara; Hisanori (Yokohama, JP), Yamaguchi; Tetsuya (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H04N 3/15 (20060101); H04N 003/14 ()

Expiration Date: 01/06/2021