Patent Number: 6,683,488

Title: Charge pump circuit for semiconductor device

Abstract: A charge pump circuit with improved pump efficiency and usable in a semiconductor memory device, includes a charge node, a pump capacitor for pumping charges of the charge node, a charge transfer transistor connected between the charge node and an output node so as to transfer the charges of the pumped charge node, a charging transistor for charging the charge node with a predetermined voltage, and a first transistor coupled to the charge node for preventing flow-back of charges from an output node to the charge node during a charging interval.

Inventors: Jin; Seung Eon (Seoul, KR)

Assignee: Hynix Semiconductor, Inc.

International Classification: G11C 5/14 (20060101); H02M 3/04 (20060101); H02M 3/07 (20060101); G05F 001/10 ()

Expiration Date: 01/27/2021