Patent Number: 6,762,001

Title: Method of fabricating an exposure mask for semiconductor manufacture

Abstract: A method of fabricating an exposure mask including the steps of forming a chrome layer, a first photo resist, an Ag layer as a conductive layer and a second photo resist on a transparent quartz substrate, in sequence; forming and using a second photo resist pattern to form a conductive layer pattern by etching the conductive layer; removing the second photo resist pattern; forming an oxide layer for shielding light at the surface of the conductive layer pattern and exposing the first photo resist using the conductive layer pattern with the oxide layer thereon; forming a first photo resist pattern exposing the chrome layer and forming a mask pattern including the chrome layer by selectively etching the exposed chrome layer; and removing the conductive layer pattern including the oxide and the first photo resist pattern.

Inventors: Kang; Sang Woo (Seoul, KR)

Assignee: Hynix Semiconductor Inc.

International Classification: G03F 1/08 (20060101); G03F 7/095 (20060101); G03F 009/00 (); G03C 005/00 ()

Expiration Date: 07/12016