Patent Number: 6,762,101

Title: Damascene double-gate FET

Abstract: A double-gate field effect transistor (DGFET) is provided using a damascene-like replacement gate processing step to create sidewall source/drain regions, oxide spacers and gate structures inside a previously formed trench. The damascene-like replacement gate processing step allows for the fabrication of a tapered transistor body region having a thicker body under the contacts which reduces access resistance.

Inventors: Chan; Kevin K. (Staten Island, NY), Jones; Erin C. (Tuckahoe, NY), Solomon; Paul M. (Yorktown Heights, NY), Wong; Hon-Sum Phillip (Chappaqua, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 21/336 (20060101); H01L 29/40 (20060101); H01L 29/49 (20060101); H01L 29/66 (20060101); H01L 29/786 (20060101); H01L 021/336 ()

Expiration Date: 07/13/2021