Patent Number: 6,762,393

Title: Inductively coupled plasma source with conductive layer and process of plasma generation

Abstract: An inductively coupled plasma source may be constructed with a reactor including a gas inlet, a gas outlet, and a tube structure containing an electrically conductive layer with an open loop. The tube structure is disposed between two electrically non-conductive layers that form a continuous loop providing a discharge path. An A.C. power source supplies A.C. voltage to the conductive layer while a D.C. power source supplies a direct current voltage to the conductive layer. An inductor is electrically connected between the conductive layer and the D.C. power source and a capacitor is electrically connected between the conductive layer and the A.C. power source. The conductive layer is biased by the D.C. voltage applied by the D.C. voltage. Induction of a magnetic field is generated by the flow of current of conductive layer to which the A.C. voltage is supplied, and a secondary electric field is generated through the discharge path by means of the inducted magnetic field, thereby initiating a discharge of a plasma.

Inventors: Choi; Dae-Kyu (Suwon-si, Kyounggi-do, KR)

Assignee:

International Classification: H01J 37/32 (20060101); H05H 1/46 (20060101); B23K 010/00 ()

Expiration Date: 07/13/2021