Patent Number: 6,762,435

Title: Semiconductor device with boron containing carbon doped silicon oxide layer

Abstract: A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.

Inventors: Towle; Steven N. (Chandler, AZ)

Assignee: Intel Corporation

International Classification: C23C 16/40 (20060101); H01L 031/256 ()

Expiration Date: 07/13/2021