Patent Number: 6,762,446

Title: Integrated capacitive device with hydrogen degradable dielectric layer protected by getter layer

Abstract: An integrated capacitive device has a thin-film capacitor formed of first and second electrode layers, electrically separated by a dielectric layer formed of a hydrogen-degradable compound. To protect the dielectric layer from degradation due to hydrogen diffusion, at least one layer of a getter material is provided, selected from alloys of zirconium, vanadium and iron, optionally containing minor quantities of manganese and/or a rare earth group element, and alloys of zirconium with at least one metal of the group of iron, cobalt and nickel, optionally containing up to about 15% by weight of elements of the rare earth group.

Inventors: Amiotti; Marco (Vigevano, IT), Jung; Jae Hak (San Luis Obispo, CA), Boffito; Claudio (Rho, IT)

Assignee: Saes Getters S.p.A.

International Classification: H01L 21/02 (20060101); H01L 029/76 (); H01L 029/94 (); H01L 031/062 (); H01L 031/113 (); H01L 027/108 ()

Expiration Date: 07/13/2021