Patent Number: 6,794,681

Title: Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof

Abstract: There are provided a substrate of a semiconductor device and a fabrication method thereof which allow to suppress impurity from turning around from a glass or quartz substrate in fabrication steps of a TFT. An insulating film is deposited so as to surround the glass substrate by means of reduced pressure thermal CVD. It allows to suppress the impurity from infiltrating from the glass substrate to an active region of the TFT in the later process.

Inventors: Nakajima; Setsuo (Kanagawa, JP), Yamazaki; Shunpei (Tokyo, JP), Ohtani; Hisashi (Kanagawa, JP), Teramoto; Satoshi (Kanagawa, JP), Hamatani; Toshiji (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/70 (20060101); H01L 27/12 (20060101); H01L 21/84 (20060101); G02F 1/13 (20060101); G02F 1/1362 (20060101); H01L 029/04 (); H01L 031/036 (); H01L 029/76 (); H01L 031/112 (); H01L 023/158 ()

Expiration Date: 09/22016