Patent Number: 6,794,688

Title: Semiconductor light-emitting device and manufacturing method therefor, and LED lamp and LED display

Abstract: A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an Al.sub.x Ga.sub.1-x As layer and the active layer, in this order. Part of the Al.sub.x Ga.sub.1-x As layer with respect to the is changed into an AlO.sub.y layer (where y is a positive real number).

Inventors: Nakatsu; Hiroshi (Tenri, JP), Kurahashi; Takahisa (Kashiba, JP), Murakami; Tetsuroh (Tenri, JP), Ooyama; Shouici (Ikoma-gun, JP)

Assignee: Sharp Kabushiki Kaisha

International Classification: H01L 33/00 (20060101); H01L 029/227 ()

Expiration Date: 09/21/2021