Patent Number: 6,794,702

Title: Semiconductor device and fabrication method thereof

Abstract: A semiconductor device and a fabrication method thereof in which the semiconductor device includes capacitors having a metal/insulator/metal (MIM) structure are disclosed. The method includes forming an interlayer insulating film on a structure of a semiconductor substrate that exposes lower wiring and a lower insulating film; selectively etching the interlayer insulating film to form a first electrode opening that exposes the lower wiring; forming a first electrode in the first electrode opening such that the first electrode opening is filled; selectively etching the interlayer insulating film at a region of the same adjacent to the first electrode to thereby form a second electrode opening; forming a dielectric layer along inner walls that define the second electrode opening; forming a second electrode on the dielectric layer in such a manner to fill the second electrode opening; and forming upper wiring on at least a portion of the second electrode.

Inventors: Park; Geon-Ook (Mapo-ku, KR)

Assignee: Anam Semiconductor Inc.

International Classification: H01L 21/70 (20060101); H01L 21/02 (20060101); H01L 23/52 (20060101); H01L 23/522 (20060101); H01L 21/768 (20060101); H01L 027/108 (); H01L 029/76 (); H01L 029/94 (); H01L 031/119 ()

Expiration Date: 09/22016