Patent Number: 6,797,987

Title: High efficiency light emitting diode and method of making the same

Abstract: A light emitting diode with high efficient reflective metal layer is disclosed. To prevent the reflective metal layer from reacting with the epi-LED layer structure during a thermal annealing process, a transparent electrical-conductive oxide layer such as ITO is formed in between them. Four preferred embodiments are proposed to improve the ohmic contact between the ITO layer and the epi-LED layers. There are: forming ohmic contact grid pattern, or ohmic contact channels in the ITO layer, or thin GaAs layer, or thin transparent metal layer at the interface between the ITO and the epi-LED layers.

Inventors: Chen; Tzer-Perng (Hsinchu, TW)

Assignee: United Epitaxy Co., Ltd.

International Classification: H01L 33/00 (20060101); H01L 033/00 ()

Expiration Date: 09/28/2021