Patent Number: 6,798,002

Title: Dual-purpose anti-reflective coating and spacer for flash memory and other dual gate technologies and method of forming

Abstract: A dual gate semiconductor device, such as a flash memory semiconductor device, whose plurality of dual gate sidewall spacer structure is formed by a first and second anti-reflection fabrication process. The sidewall spacers of the dual transistor gate structures in the core memory region are left coated with the second anti-reflective coating material, after being used for gate patterning, to act as sidewall spacers for use in subsequent ion implant and salicidation fabrication steps. The second anti-reflective coating material is selected from a material group such as silicon oxynitride (SiON), silicon nitride (Si.sub.3 N.sub.4), and silicon germanium (SiGe), or other anti-reflective coating material having optical properties and that are compatible with the subsequent implant and salicidation steps.

Inventors: Ogle, Jr.; Robert B. (San Jose, CA), Pham; Tuan D. (San Jose, CA), Ramsbey; Mark T. (Sunnyvale, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 27/108 (20060101); H01L 29/66 (20060101); H01L 29/76 (20060101); H01L 29/94 (20060101); H01L 31/115 (20060101); H01L 31/119 (20060101); H01L 027/108 (); H01L 029/76 (); H01L 029/94 (); H01L 031/119 ()

Expiration Date: 09/28/2021