Patent Number: 6,798,004

Title: Magnetoresistive random access memory devices and methods for fabricating the same

Abstract: Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A contact element is formed electrically coupled to the transistor and a dielectric material is deposited within an area partially bounded by the contact element. A digit line is formed within the dielectric material, the digit line overlying a portion of the contact element. A conductive layer is formed overlying the digit line and in electrical communication with the contact element.

Inventors: Grynkewich; Gregory W. (Gilbert, AZ), Butcher; Brian R. (Gilbert, AZ), Durlam; Mark A. (Chandler, AZ), Tracy; Clarence J. (Tempe, AZ)

Assignee: Freescale Semiconductor, Inc.

International Classification: H01L 21/00 (20060101); H01L 29/66 (20060101); H01L 29/76 (20060101); H01L 029/76 ()

Expiration Date: 09/28/2021