Patent Number: 6,798,043

Title: Structure and method for isolating porous low-k dielectric films

Abstract: A film structure includes low-k dielectric films and N--H base source films such as barrier layer films, etch-stop films and hardmask films. Interposed between the low-k dielectric film and adjacent N--H base film is a TEOS oxide film which suppresses the diffusion of amines or other N--H bases from the N--H base source film to the low-k dielectric film. The film structure may be patterned using DUV lithography and a chemically amplified photoresist since there are no base groups present in the low-k dielectric films to neutralize the acid catalysts in the chemically amplified photoresist.

Inventors: Steiner; Kurt G. (Orlando, FL), Vitkavage; Susan (Orlando, FL), Lytle; Steve (Orlando, FL), Gibson; Gerald (Orlando, FL), Jessen; Scott (Orlando, FL)

Assignee: Agere Systems, Inc.

International Classification: H01L 21/02 (20060101); H01L 23/52 (20060101); H01L 21/316 (20060101); H01L 23/532 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/318 (20060101); H01L 21/312 (20060101); H01L 21/314 (20060101); H01L 023/58 (); H01L 023/48 ()

Expiration Date: 09/28/2021