Patent Number: 6,841,826

Title: Low-GIDL MOSFET structure and method for fabrication

Abstract: A low-GIDL current MOSFET device structure and a method of fabrication thereof which provides a low-GIDL current. The MOSFET device structure contains a central gate conductor whose edges may slightly overlap the source/drain diffusions, and left and right side wing gate conductors which are separated from the central gate conductor by a thin insulating and diffusion barrier layer.

Inventors: Dokumaci; Omer H. (Wappingers Falls, NY), Doris; Bruce B. (Brewster, NY), Gluschenkov; Oleg (Wappingers Falls, NY), Mandelman; Jack A. (Flat Rock, NC), Radens; Carl J. (LaGrangeville, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/40 (20060101); H01L 21/02 (20060101); H01L 21/265 (20060101); H01L 29/66 (20060101); H01L 29/49 (20060101); H01L 21/28 (20060101); H01L 29/78 (20060101); H01L 21/336 (20060101); H01L 029/76 (); H01L 029/94 (); H01L 031/062 (); H01L 021/336 (); H01L 029/49 ()

Expiration Date: 01/11/2022